| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein operation speed can be improved without causing increase of OFF-state current and deterioration of ON-state current, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device is provided with a channel layer 18 which is formed on a silicon substrate 10 and composed of SiGe whose thickness is 2-6 nm, a gate electrode 22 which is formed on the channel layer through a gate insulating film 20, and a source/drain diffusion layer 32 which is formed in both sides of the gate electrode. Since the channel layer is formed thinly, quantum confining effect can be generated in the channel layer, and effectual band gap in the channel layer can be enlarged. Since carrier mobility can be improved without causing increase of OFF-state current, deterioration of ON-state current, etc, the semiconductor device whose operation speed is high can be provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
