发明名称 ELEVATED PHOTO DIODE IN AN IMAGE SENSOR
摘要 The invention provides an elevated photodiode for image sensors and methods of formation of the photodiode. Elevated photodiodes permit a decrease in size requirements for pixel sensor cells while reducing leakage, image lag and barrier problems typically associated with conventional photodiodes.
申请公布号 US2005121708(A1) 申请公布日期 2005.06.09
申请号 US20040022941 申请日期 2004.12.28
申请人 HONG SUNGKWON 发明人 HONG SUNGKWON
分类号 H01L21/00;H01L27/146;H01L29/04;H01L29/80;H01L31/0376;H01L31/062;H01L31/113;(IPC1-7):H01L31/037 主分类号 H01L21/00
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