发明名称 |
Manufacturing method for a semiconductor device |
摘要 |
A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main body wafer manufacturing process for manufacturing a wafer on which a semiconductor device to be completed as a product is formed and a monitor wafer manufacturing process for manufacturing a wafer on which a monitor element is formed, the processes sharing a monitoring step alone, the main body wafer manufacturing process including a variation reduction step, the monitor wafer manufacturing process including a quality check step and a condition setting step.
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申请公布号 |
US2005124081(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20040936009 |
申请日期 |
2004.09.08 |
申请人 |
ISHII KAZUTOSHI;OSANAI JUN;KITAJIMA YUICHIRO;MINAMI YUKIMASA;UEMURA KEISUKE;WAKE MIWA |
发明人 |
ISHII KAZUTOSHI;OSANAI JUN;KITAJIMA YUICHIRO;MINAMI YUKIMASA;UEMURA KEISUKE;WAKE MIWA |
分类号 |
G01R31/26;H01L21/00;H01L21/02;H01L21/66;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/66 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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