发明名称 |
Method and apparatus for characterizing shared contacts in high-density SRAM cell design |
摘要 |
Test structures are provided for accurately quantifying shared contact resistance. The test structures are built based upon an actual memory cell, which is self-aligning to allow shared contact chains through an array of test cells. A main array of test cells is built to provide a chain of shared contact resistance. Using the main array of test cells, a resistance in the shared contact chain may be measured. Supplemental arrays of test cells is built to provide a chain of poly side resistance, a chain of island side resistance, a chain of island connection line resistance, and a chain of poly connection resistance. A tester measures resistance using the test structures and uses the values to accurately determine shared contact resistance.
|
申请公布号 |
US2005122120(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20030727719 |
申请日期 |
2003.12.04 |
申请人 |
DUAN FRANKLIN;RAMESH SUBRAMANIAN;CASTAGNETTI RUGGERO |
发明人 |
DUAN FRANKLIN;RAMESH SUBRAMANIAN;CASTAGNETTI RUGGERO |
分类号 |
G01R27/08;G01R31/26;G11C29/02;(IPC1-7):G01R27/08 |
主分类号 |
G01R27/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|