发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus that is capable of improving the adhesion of a substrate and a ground electrode in substrate treatment and stably generating plasma. SOLUTION: The substrate treatment apparatus 10 comprises a ground electrode 13 and a substrate pressing member 20 that is installed to face the ground electrode 13. The ground electrode 13 comprises a thick portion 13b that supports a substrate 16, and a thin portion 13a that is thinner than the thick portion 13b. The substrate pressing member 20 comprises a supporting portion 22 that is installed to face the thin portion 13b, and a substrate presser plate 21 that is supported by the supporting portion 22. The substrate presser plate 21 is formed to press the substrate 16 on the thick portion 13b when the ground electrode 13 and the substrate pressing member 20 are adjacent. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150605(A) 申请公布日期 2005.06.09
申请号 JP20030389373 申请日期 2003.11.19
申请人 MITSUBISHI HEAVY IND LTD 发明人 OTSUBO EIICHIRO;MIYAZONO NAOYUKI;SASAGAWA EISHIRO;UENO MOICHI
分类号 H01L21/683;H01L21/205;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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