| 摘要 |
PROBLEM TO BE SOLVED: To increase the quality of an interface between a dielectric region and a semiconductor substrate, obtain a dielectric region impermeable to an impurity atom from a gate region, and obtain a thickness substantially equal to that of a stacked dielectric film. SOLUTION: By capturing a nitrogen atom into a dielectric film comprising silicon oxide, a dielectric film is provided which is partially converted into a silicon oxide nitride film. Before the nitride atom is introduced to the dielectric film comprising the silicon oxide, the dielectric film is formed as silicon oxide in which a ratio of silicon atoms to oxygen atoms is larger than 1:2. In this way, particularly in a MOS transistor, it is possible to increase the quality of the interface between the dielectric region and the semiconductor substrate, obtain the dielectric region impermeable to the impurity atom from the gate region, and obtain the thickness substantially equal to that of the stacked dielectric film. COPYRIGHT: (C)2005,JPO&NCIPI
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