| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of accurately forming two kinds of fine trenches having different depths on a semiconductor substrate. SOLUTION: The manufacturing method of a semiconductor device comprises a process of forming a first resist pattern 108 on a hard mask 106 using ArF exposure, a process of forming first and second openings 106a, 106b in the second hard mask 106 taking the first resist pattern 108 as an etching mask, a process of forming a third opening 105a and a fourth opening 105b in the first hard mask 105 below the openings 106a, 106b, a process of forming a partial trench (first trench) 103a and a full trench (second trench) 103b in an SOI substrate (semiconductor substrate) 100 below the openings 105a, 105b, and a process of making a full trench 103c by etching the trench 103b through the fourth opening 105b exposed from a third window 111a in a second resist pattern 111. COPYRIGHT: (C)2005,JPO&NCIPI
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