发明名称 MAGNETORESISTIVE EFFECT ELEMENT, THIN FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress a change in sensitivity of a magnetoresistive effect element by suppressing the instability in fixing the magnetization direction in a pinned layer. SOLUTION: The MR element 5 comprises a non-magnetic conductive layer 25 having two planes facing opposite directions, free layer 26 located adjacent to one plane of the non-magnetic conductive layer 25, the pinned layer 24 located adjacent to the other plane of the non-magnetic conductive layer 25 and has the magnetization direction fixed, antiferromagnetic layer 22 which is located adjacent to one plane of the pinned layer 24 opposite from one on the non-magnetic conductive layer 25 side and fixes the magnetization direction in the pinned layer 24 by switched connection with the pinned layer 24, and intermediate layer 23 which is located between the antiferromagnetic layer 22 and the pinned layer 24 and is formed of a non-magnetic and conductive material. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150292(A) 申请公布日期 2005.06.09
申请号 JP20030383752 申请日期 2003.11.13
申请人 TDK CORP 发明人 SANO MASASHI
分类号 G11B5/39;H01L43/08;(IPC1-7):H01L43/08 主分类号 G11B5/39
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