| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an increase of a capacitance between wiring due to the disposition of a dummy metal and an increase of a delay value in metal wiring can be suppressed; and to provide a method of manufacturing the same. SOLUTION: The method of manufacturing the semiconductor device includes a step of forming the first metal wiring 12 having the partial film thickness of the entire film thickness of the metal wiring, a step of forming an interlayer dielectric 14 covering the entire upper surface of an underlying insulating film 10 and the first metal wiring, and a step of then exposing the surface of the first metal wring while flattening the surface by cutting the first interlayer dielectric. The method further includes a step of then forming the second metal wiring 16 having the residual partial film thickness of the entire film thickness of the metal wiring on the first metal wiring; a step of forming the dummy metal 18 between the second metal wires on the first interlayer dielectric, a step of forming the first interlayer dielectric, the second metal wiring, and the second interlayer dielectric 20 covering the entire upper surface of the dummy metal; and a step of then exposing the front surfaces of the second metal wiring and the dummy metal, while flattening the surface by cutting the second interlayer dielectric. COPYRIGHT: (C)2005,JPO&NCIPI
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