Methods of erasing a non-volatile memory device having discrete charge trap sites

摘要

Methods of erasing a non-volatile memory device having discrete charge trap sites between a semiconductor substrate and a gate include applying a negative voltage to a gate at least partially spaced apart from a semiconductor substrate by a charge storage layer providing discrete charge trap sites. A first positive voltage is applied to a source formed in the semiconductor substrate adjacent to one sidewall of the gate. A second positive voltage, which is equal to or less than the first positive voltage, is applied to a drain formed in the semiconductor substrate adjacent to the gate and located opposite the source.