发明名称 |
GRAPHITE MATERIAL FOR SYNTHESIZING SEMICONDUCTOR DIAMOND AND SEMICONDUCTOR DIAMOND PRODUCED BY USING THE SAME |
摘要 |
A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen. <IMAGE> |
申请公布号 |
EP1460040(A4) |
申请公布日期 |
2005.06.08 |
申请号 |
EP20010995048 |
申请日期 |
2001.12.28 |
申请人 |
TOYO TANSO CO., LTD. |
发明人 |
FUKUNAGA, OSAMU;OKUBO, HIROSHI;SOGABE, TOSHIAKI;TOJO, TETSURO |
分类号 |
B01J3/06;B30B11/00;C01B31/06;C04B35/52;C04B35/528;C04B35/645 |
主分类号 |
B01J3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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