发明名称 GRAPHITE MATERIAL FOR SYNTHESIZING SEMICONDUCTOR DIAMOND AND SEMICONDUCTOR DIAMOND PRODUCED BY USING THE SAME
摘要 A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen. <IMAGE>
申请公布号 EP1460040(A4) 申请公布日期 2005.06.08
申请号 EP20010995048 申请日期 2001.12.28
申请人 TOYO TANSO CO., LTD. 发明人 FUKUNAGA, OSAMU;OKUBO, HIROSHI;SOGABE, TOSHIAKI;TOJO, TETSURO
分类号 B01J3/06;B30B11/00;C01B31/06;C04B35/52;C04B35/528;C04B35/645 主分类号 B01J3/06
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