发明名称 |
DIBORIDE SINGLE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE USING THIS AND ITS MANUFACTURING METHOD |
摘要 |
Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized. <IMAGE>
|
申请公布号 |
EP1538243(A1) |
申请公布日期 |
2005.06.08 |
申请号 |
EP20030792773 |
申请日期 |
2003.08.21 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE;KYOCERA CORPORATION |
发明人 |
OTANI, SHIGEKI;KINOSHITA, HIROYUKI;MATSUNAMI, HIROYUKI;SUDA, JUN;AMANO, HIROSHI;AKASAKI, ISAMU;KAMIYAMA, SATOSHI |
分类号 |
H01L21/331;C30B29/10;C30B33/00;H01L21/20;H01L29/04;H01L29/24;H01L29/737;H01L29/93;H01L31/0264;H01L31/10;H01L33/14;H01L33/32;H01S5/02;H01S5/323;(IPC1-7):C30B29/10;H01L29/12 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|