| 摘要 |
1,108,274. Semi-conductor devices. DANFOSS A/S. 3 March. 1966 [3 March, 1965¦. No. 9387/66..Heading H1K. ' A semi-conductor device having high and low resistance states comprises a semi-conductor body without barrier layers and having a negative temperature coefficient of resistance in the high resistivity state in, which the leakage current is uniformly distributed, and such that a localized drop in resistance is concentrated in a narrow channel whose cross-sectional area increases with increased current. As shown. Fig. 5, a semi-conductor element 9, having a resistance-temperature characteristic of the shape illustrated in Fig. 4 (not shown), is mounted on an electrode 8 and provided with a strip-shaped electrode 10 one end 11 of which extends below the surface of element 9 to define an initiating point. At high currents the conduction channel spreads along a curved path beneath electrode 10. . The semi-conductor material may be an alloy e.g. As-S-Se, As-P-Se, Zn-As-Si, Zn-As-Ge, Cd-As-Si, or Cd-As-Ge, and the element may be produced by sintering, cooling from a melt, or evaporation on to a substrate. The element may be monocrystalline, polycrystalline or amorphous. Electrode 10 may be a rectilinear strip or a circular disc. Switching may also be initiated by a capacitatively or inductively applied field. |
