发明名称 |
Silicon-based dielectric tunneling emitter |
摘要 |
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
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申请公布号 |
US6902458(B2) |
申请公布日期 |
2005.06.07 |
申请号 |
US20040755890 |
申请日期 |
2004.01.12 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
CHEN ZHIZHANG;BIC MICHAEL DAVID;ENCK RONALD L.;REGAN MICHAEL J.;NOVET THOMAS;BENNING PAUL J. |
分类号 |
G11C13/04;H01J1/312;H01J9/02;H01J19/24;H01J21/06;H01J29/04;H01J31/12;(IPC1-7):H01L29/06;H01J9/04 |
主分类号 |
G11C13/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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