发明名称 |
Method for plasma etching of high-K dielectric materials |
摘要 |
A method of etching high dielectric constant materials (a material with a dielectric constant greater than 4) using a halogen gas, reducing gas, and passivating gas chemistry. An embodiment of the method is accomplished using chlorine, carbon monoxide, and nitrogen to etch and passivate a hafnium dioxide layer.
|
申请公布号 |
US6902681(B2) |
申请公布日期 |
2005.06.07 |
申请号 |
US20020184301 |
申请日期 |
2002.06.26 |
申请人 |
NALLAN PADMAPANI C.;KUMAR AJAY |
发明人 |
NALLAN PADMAPANI C.;KUMAR AJAY |
分类号 |
H01L21/28;H01L21/311;(IPC1-7):B44C1/22 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|