发明名称 |
Semiconductor memory device having twin-cell units |
摘要 |
Each of twin-cell units each formed of two DRAM cells has a cell plate electrically isolated from the cell plates in the other twin-cell units. Thereby, voltages on two storage nodes storing mutually complementary data in the same twin-cell unit change similarly to each other owing to capacitive coupling.
|
申请公布号 |
US6903961(B2) |
申请公布日期 |
2005.06.07 |
申请号 |
US20030606240 |
申请日期 |
2003.06.26 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
TSUKIKAWA YASUHIKO;ITO TAKASHI |
分类号 |
H01L27/108;G11C7/18;G11C11/401;G11C11/404;G11C11/405;G11C11/4097;H01L21/8242;H01L27/02;(IPC1-7):G11C11/24 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|