发明名称 |
ULTRA-LOW DIELECTRICS FOR COPPER INTERCONNECT |
摘要 |
<p>The present invention relates to an ultra-low dielectric film for a copper interconnect, in particular, to an porous film prepared in such a manner that coating with an organic solution containing a polyalkyl silsesquioxane precursor or its copolymer as a matrix and acetylcyclodextrin nanoparticles as a template and then performing a sol-gel reaction and heat treatment at higher temperature. The present films may contain the template of up to 60 vol %, due to the use of acetylcyclodextrin, and have homogeneously distributed pores with the size of no more than 5 nm in the matrix. In addition, the present films exhibit a relatively low dielectric constant of about 1.5, and excellent interconnectivity between pores, so that they are considered a promising ultra-low dielectric film for a copper interconnect.</p> |
申请公布号 |
KR20050052710(A) |
申请公布日期 |
2005.06.07 |
申请号 |
KR20030086244 |
申请日期 |
2003.12.01 |
申请人 |
SOGANG UNIVERSITY CORPORATION |
发明人 |
RHEE, HEE WOO;YOON, DO YOUNG;CHAR, KOOK HEON;LEE, JIN KYU;MOON, BONG JIN;MIN, SUNG KYU;PARK, SE JUNG;SHIN, JAE JIN |
分类号 |
H01L21/31;H01L21/316;H01L21/768;H01L23/532;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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