发明名称 ESD protection circuit for mixed-voltage I/O ports using substrated triggering
摘要 An ESD protection circuit for mixed-voltage input/output (I/O) circuits. The ESD protection circuit utilizes substrate triggering of a parasitic NPN BJT under a cascaded NMOS transistor pair with a current generated by a triggering current generator. The ESD protection circuit is triggered much faster. Under normal circuit operations, the triggering current generator can also endure high-voltage signals without overstressing internal components and retains good reliability.
申请公布号 US6903913(B2) 申请公布日期 2005.06.07
申请号 US20020253643 申请日期 2002.09.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 KER MING-DOU;CHUAN CHIEN-HUI
分类号 H01L23/60;H01L27/02;H02H3/22;(IPC1-7):H02H3/22 主分类号 H01L23/60
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