| 摘要 |
A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. A signal transmitting FET has a gate width of 500 mum and a signal receiving FET has a gate width of 400 mum. A resistor connecting a gate electrode and a control terminal of the signal transmitting FET is tightly configured to provide expanding space for the FET. Despite the reduced size, the switching device can allow a maximum power of 22.5 dBm to pass through because of the asymmetrical device design. The switching device operates at frequencies of 2.4 GHz or higher without use of shunt FET.
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