发明名称 |
Massively parallel atomic layer deposition/chemical vapor deposition system |
摘要 |
A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.
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申请公布号 |
US6902624(B2) |
申请公布日期 |
2005.06.07 |
申请号 |
US20020282609 |
申请日期 |
2002.10.29 |
申请人 |
GENUS, INC. |
发明人 |
SEIDEL THOMAS E.;JANSZ ADRIAN;PUCHACZ JUREK;DOERING KEN |
分类号 |
C23C16/44;C23C16/455;C23C16/54;(IPC1-7):C33C16/00;C23F1/00;H01L21/306 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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