发明名称 |
CPP GMR synthetic spin valve enhancement |
摘要 |
In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This effect has been reduced by replacing the conventional single layer AP2, that forms part of the synthetic pinned layer, with a multilayer structure into which has been inserted at least one layer of a material such as tantalum that serves to depolarize the spin of electrons that traverse its interfaces. The result is a reduction of said negative contribution by AP2, leading to a significant increase in the GMR ratio.
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申请公布号 |
US6903904(B2) |
申请公布日期 |
2005.06.07 |
申请号 |
US20020277453 |
申请日期 |
2002.10.22 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
LI MIN;JU KOCHAN;LIAO SIMON |
分类号 |
G11B5/39;H01F10/32;H01F41/30;(IPC1-7):G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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