发明名称 CPP GMR synthetic spin valve enhancement
摘要 In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This effect has been reduced by replacing the conventional single layer AP2, that forms part of the synthetic pinned layer, with a multilayer structure into which has been inserted at least one layer of a material such as tantalum that serves to depolarize the spin of electrons that traverse its interfaces. The result is a reduction of said negative contribution by AP2, leading to a significant increase in the GMR ratio.
申请公布号 US6903904(B2) 申请公布日期 2005.06.07
申请号 US20020277453 申请日期 2002.10.22
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 LI MIN;JU KOCHAN;LIAO SIMON
分类号 G11B5/39;H01F10/32;H01F41/30;(IPC1-7):G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项
地址