发明名称 |
Nonvolatile memory capable of storing multibits binary information and the method of forming the same |
摘要 |
A nonvolatile memory capable of storing multi-bits binary information is provided. The memory includes an oxide formed on a substrate. A control gate is formed on the oxide. An L-shape structure is attached on sidewall of the control gate. Spacers are formed on the L-shape structure to act as a floating gate. A first doped region and a second doped region is formed in the substrate adjacent to the spacers with a channel between the two doped regions. Wherein the spacer represent a first binary status by injecting and storing electrical charges in the spacers. Or to represent a second binary status by not injecting electrical charges into the spacer.
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申请公布号 |
US6903968(B2) |
申请公布日期 |
2005.06.07 |
申请号 |
US20040763773 |
申请日期 |
2004.01.22 |
申请人 |
APPLIED INTELLECTUAL PROPERTIES CO., LTD. |
发明人 |
JENG ERIK S. |
分类号 |
H01L21/8247;H01L27/115;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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