| 发明名称 |
Method of manufacturing integrated circuit |
| 摘要 |
In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM 1 is used which is provided partially with a light shielding patterns 3 a formed of a resist film, in addition to light shielding patterns formed of a metal.
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| 申请公布号 |
US6902868(B2) |
申请公布日期 |
2005.06.07 |
| 申请号 |
US20020311456 |
申请日期 |
2002.12.17 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
HASEGAWA NORIO;OKADA JOJI;TANAKA TOSHIHIKO;MORI KAZUTAKA;MIYAZAKI KO |
| 分类号 |
G03F1/08;G03F1/10;G03F1/14;G03F1/54;G03F1/56;G03F1/62;G03F1/68;G03F1/70;G03F7/00;G03F7/20;H01L21/027;(IPC1-7):G03F7/00 |
主分类号 |
G03F1/08 |
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