发明名称 Methods of forming void regions, dielectric regions and capacitor constructions
摘要 In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c) subjecting the mass to hydrogen to convert a component of the mass to a volatile form; and d) volatilizing the volatile form of the component from the mass to leave a void region associated with the substrate. In another aspect, the invention includes a method of forming a capacitor construction, comprising: a) forming a first capacitor electrode over a substrate; b) forming a sacrificial material proximate the first capacitor electrode; c) forming a second capacitor electrode proximate the sacrificial material, the second capacitor electrode being separated from the first capacitor electrode by the sacrificial material, at least one of the first and second electrodes being a metal-comprising layer; and d) subjecting the sacrificial material to conditions which transport a component from the sacrificial material to the metal-comprising layer, the transported component leaving a void region between the first and second capacitor electrodes.
申请公布号 US6902984(B2) 申请公布日期 2005.06.07
申请号 US20040827933 申请日期 2004.04.19
申请人 MICRON TECHNOLOGY, INC. 发明人 ELDRIDGE JEROME MICHAEL
分类号 B81B3/00;H01L21/02;H01L21/311;(IPC1-7):H01L21/20 主分类号 B81B3/00
代理机构 代理人
主权项
地址