Semiconductor devices, capacitor antifuses, dynamic random access memories, and cell plate bias connection methods

摘要

In one aspect, a semiconductor device includes an array of memory cells. Individual memory cell of the array include a capacitor having first and second electrode, a dielectric layer disposed between the first and second electrodes. Select individual capacitors are energized so as to blow the dielectric layer to establish a connection between the first and second electrodes such that, after blowing the dielectric layer, the second electrode is coupled to a cell plate generator establish a bias connection therebetween. Cell plate bias connection methods are also described.