发明名称 |
Method for manufacture of MRAM memory elements |
摘要 |
A magnetic memory element has reduced demagnetization coupling between a pinned layer and a free layer. The element includes a pinned ferromagnetic layer and a free ferromagnetic layer which are separated by a barrier layer. The pinned layer is pinned by an antiferromagnetic layer. An offset ferromagnetic layer is provided on a side of the antiferromagnetic layer opposite the pinned ferromagnetic layer to reduce demagnetization coupling between the free ferromagnetic layer and the pinned ferromagnetic layer.
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申请公布号 |
US6902940(B2) |
申请公布日期 |
2005.06.07 |
申请号 |
US20030644882 |
申请日期 |
2003.08.21 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DREWES JOEL A. |
分类号 |
G11C7/00;H01L21/00;H01L27/22;H01L31/119;H01L43/08;(IPC1-7):H01L21/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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