EEPROM CELL AND EEPROM DEVICE HAVING HIGH INTEGRATION AND LOW SOURCE RESISTANCE AND METHOD FOR FABRICATING THE SAME,申请号KR20030085766-传众专利搜索

发明名称	EEPROM CELL AND EEPROM DEVICE HAVING HIGH INTEGRATION AND LOW SOURCE RESISTANCE AND METHOD FOR FABRICATING THE SAME
摘要
申请公布号	KR20050052598(A)	申请公布日期	2005.06.03
申请号	KR20030085766	申请日期	2003.11.28
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	PARK, WEON HO;KIM, BYOUNG HO;YOO, HYUN KHE;YOON, SEUNG BEOM;PARK, SUNG CHUL;KIM, JU RI;KIM, KWANG TAE;HAN, JEON GUK
分类号	H01L27/115;G11C8/02;H01L21/8247;(IPC1-7):H01L27/115	主分类号	H01L27/115
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