| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor chip having a structure in which the cracking and film peeling of an interlayer insulating film in a dicing process are not generated in an element forming region, and to provide a manufacturing method for the chip. SOLUTION: The semiconductor chip 100 has a semiconductor substrate 10 and a semiconductor element formed on the surface of the substrate 10. The chip 100 further has laminated films being composed of a plurality of the interlayer insulating films 12 to 52 deposited on the substrate 10 so as to coat the element, and containing a hollow trench 70 formed in the vertical direction to the surface of the substrate 10 to at least a part of the outer edge of the substrate 10. COPYRIGHT: (C)2005,JPO&NCIPI
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