SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

Provided is a light emitting diode including a base substrate having a via hole, a buffer layer having a via hole which is partially overlapped with the via hole of the base substrate, a first conductive contact layer formed on the first conductive layer, a first clad layer formed on the second conductive contact layer, a light emitting layer formed on the first clad layer, a second clad layer formed on the active region, a second conductive contact layer formed on the second conductive clad layer, a first electrode formed on the second conductive contact layer, and a second electrode connected with the first conductive contact layer through the via hole.