| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric converter having small leakage current in the floating diffusion region. <P>SOLUTION: A P<SP>+</SP>type channel stop layer under the source and drain region of a transfer transistor 103 is arranged such that it contacts a depletion region 208, which is formed around the floating diffusion region 106, i.e. an N<SP>+</SP>diffusion layer, only at E point. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
