| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of cleaning a semiconductor manufacturing apparatus, where in forming a semiconductor thin film, a fluorine gas is prevented from leaking out of a substrate support electrode (electrostatic chuck) on which a substrate is placed; the semiconductor thin film can be formed without reducing a deposition temperature around the substrate (wafer); defects such as the abnormal thickness of a film, a failure of etching and film peeling are prevented, and also to provide a method of manufacturing the semiconductor device. SOLUTION: At a waiting time for forming a semiconductor thin film before a wafer (substrate) is introduced into a chamber 104, a fluorine reduction processing is performed in the chamber using hydrogen gas and inert gas. COPYRIGHT: (C)2005,JPO&NCIPI
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