| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor fabrication apparatus and its processing method that can determine, by measurement or calculation, wafer voltage during processing and impedance from the wafer to the earth through plasma by use of a plasma etcher, a plasma CVD, and the like, thus doing processing based on the impedance. SOLUTION: The semiconductor fabrication apparatus can be completed by having a wafer potential probe 24, a current/voltage probe 17 that measures at least either one of voltage and current applied to a wafer stage, a calculation part that determines impedance from the wafer to the earth through plasma on the basis of a wafer voltage value, a voltage value or a current value applied to the wafer stage, and a processing part that does processing based on the impedance. Use of the above permits wafer voltage and plasma impedance to be precisely found, and controlling etching parameters on the basis of this information allows reproducible etching to be achieved, thus preventing the yield from being lowered. COPYRIGHT: (C)2005,JPO&NCIPI
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