| 发明名称 |
Method for selective removal of high-k material |
| 摘要 |
The present invention relates to a method for selectively removing a high-k material comprising providing a high-k material on a semiconductor substrate, and contacting the high-k material with a solution comprising HF, an organic compound, and an inorganic acid.
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| 申请公布号 |
US2005115925(A1) |
申请公布日期 |
2005.06.02 |
| 申请号 |
US20040797888 |
申请日期 |
2004.03.09 |
| 申请人 |
PARASCHIV VASILE;CLAES MARTINE |
发明人 |
PARASCHIV VASILE;CLAES MARTINE |
| 分类号 |
C23F1/00;H01L21/311;H01L21/336;(IPC1-7):C23F1/00 |
主分类号 |
C23F1/00 |
| 代理机构 |
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