| 摘要 |
PROBLEM TO BE SOLVED: To enable manufacturing of a mono-electron transistor or mono- electron memory acting stably at room temp., by two-dimensionally arranging quantum dots composed of a plurality of atom sets of specified diameters on an insulator at specified pitches. SOLUTION: A two-dimensional crystal with many white dots of an iron oxide and black parts of a remaining protein or Si around them is heat treated again in hydrogen at 300-500 deg.C for 60 min. to form many two-dimensionally arranged quantum elements from iron atom aggregates on a surface oxide film of a silicon substrate, the aggregate diameter is 5-10 nm and equal to that of the nucleus of a ferrum oxide in ferritin and an inter-aggregate pitch is 11-14 nm and equal to one side of a ferritin protein shell. By setting so that one of the aggregates M is a quantum well Q, adjacent two are drain D and source S, a fourth aggregate adjacent the quantum well Q is a gate G and using other aggregates M as a wiring, a mono-electron transistor is formed. |
