发明名称 |
Method of processing a substrate, heating apparatus, and method of forming a pattern |
摘要 |
A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.
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申请公布号 |
US2005118535(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20050029375 |
申请日期 |
2005.01.06 |
申请人 |
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发明人 |
KAWANO KENJI;ITO SHINICHI;SHIOBARA EISHI |
分类号 |
G03F7/38;G03F7/004;G03F7/40;H01L21/00;H01L21/027;H01L21/469;(IPC1-7):G03F7/40 |
主分类号 |
G03F7/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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