| 摘要 |
A plasma processing method in which plasma can be ignited stably with a low radio frequency power and a low gas pressure even after long time operation by applying a DC voltage of -0.5 kV, for example, from a DC power supply ( 118 ) to a lower electrode ( 104 ) before a radio frequency power is applied from a radio frequency power supply ( 114 ) to the lower electrode ( 104 ) through a matching unit 112 when the surface of a wafer W mounted on the lower electrode ( 104 ) disposed in a processing container ( 102 ) is subjected to a specified plasma processing with plasma of a processing gas formed by applying a radio frequency power to the processing gas introduced into the airtight processing container ( 102 ).
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