发明名称 |
NEGATIVE PHOTORESISTS FOR SHORT WAVELENGTH IMAGING |
摘要 |
<p>New negative-acting photoresist compositions are provided that are particularly useful for imaging at short wavelengths, particularly sub- 200 nm wavelengths such as 193 nm. Resists of the invention provide contrast between exposed and unexposed coating layer regions through crosslinking or other solubility switching mechanism. Preferred resists of the invention include a resin component that contains repeat units that facilitate aqueous base solubility.</p> |
申请公布号 |
KR20050052412(A) |
申请公布日期 |
2005.06.02 |
申请号 |
KR20047005923 |
申请日期 |
2003.03.04 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. |
发明人 |
BARCLAY GEORGE G.;PUGLIANO NICHOLAS |
分类号 |
G03F7/033;G03F7/004;G03F7/038;G03F7/075;G03F7/11;G03F7/38;H01L21/027;(IPC1-7):G03F7/004 |
主分类号 |
G03F7/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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