| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing) slurry composition which possesses high selectivity for removal of copper, in relation to tantalum and dielectric materials, while minimizing local dishing and erosion effects during CMP processing of a substrate consisting of a metal, a barrier material, and a dielectric material. <P>SOLUTION: A composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivity for the removal of copper in relation to tantalum and dielectric materials, while minimizing local dishing and erosion effects in CMP. The composition can further contain an oxidizing agent, and in this case, the composition is particularly useful in relation to an associated method for metal CMP applications (such as copper CMP). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
