| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device that has less deterioration in a ferroelectric and is capable of high-speed operation. SOLUTION: The ferroelectric memory device has a ferroelectric capacitor whose one end is electrically connected to a bit line. The ferroelectric memory device comprises a voltage source for generating a specified voltage; a resistor provided between the bit line and the voltage source; and a switch that is provided in series with the resistor and switches whether or not a specified voltage is supplied to the bit line through the resistor for a specified period. Preferably, the voltage source generates a drive voltage for driving a ferroelectric memory, the voltage between the coercive voltage of the ferroelectric capacitor and the drive voltage for driving the ferroelectric memory, or voltage that is smaller than the coercive voltage of the ferroelectric capacitor as the specified voltage. COPYRIGHT: (C)2005,JPO&NCIPI
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