| 发明名称 |
Radical assisted oxidation apparatus |
| 摘要 |
Provided is a radical assisted oxidation apparatus comprising a gas supply system, a radical source, a growth chamber, a load lock chamber, and a vacuum system, whereby it is possible to manufacture a high quality oxide film at a low temperature and improve a low frequency noise (1/f).
|
| 申请公布号 |
US2005115946(A1) |
申请公布日期 |
2005.06.02 |
| 申请号 |
US20040817851 |
申请日期 |
2004.04.06 |
| 申请人 |
SHIM KYU H.;SONG YOUNG J.;KIM SANG H.;LEE NAE E.;KANG JIN Y. |
发明人 |
SHIM KYU H.;SONG YOUNG J.;KIM SANG H.;LEE NAE E.;KANG JIN Y. |
| 分类号 |
H01L21/205;F27B5/14;F27B17/00;H01L21/00;H01L21/316;H01L21/44;(IPC1-7):F27B5/14 |
主分类号 |
H01L21/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
