发明名称 |
SILICON CARBIDE COMPONENTS OF SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUSES TREATED TO REMOVE FREE-CARBON |
摘要 |
Silicon carbide components of a plasma processing apparatus, methods of making the components, and methods of using the components during processing of semiconductor substrates to provide for reduced particle contamination of the substrates are provided. The silicon carbide components are made by a process that results in free-carbon in the components. The silicon carbide components are treated to remove the free-carbon from at least the surface. |
申请公布号 |
WO2005050705(A2) |
申请公布日期 |
2005.06.02 |
申请号 |
WO2004US37945 |
申请日期 |
2004.11.12 |
申请人 |
LAM RESEARCH CORPORATION;REN, DAXING |
发明人 |
REN, DAXING |
分类号 |
C23C16/44;H01J37/32;H01L;H01L21/00;H01L21/302;H01L21/461 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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