| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new gold wire bonding technique for enabling a remarkable improvement of an entire process efficiency. <P>SOLUTION: An exposed copper welding pad 11 is provided outside a chip 1 already subjected to a semiconductor circuit process. When the copper welding pad 11 for the chip 1 is manufactured or when a copper welding oxide is removed therefrom, a welding pad protection film 12 of anti-oxidation material having a thermally-volatile anti-oxidation material is applied on the pad 11 of the chip 1 to protect the pad 11 from oxidizing and to enable long period storage. Even in such a situation that a process of removing the protective film 12 of the pad is unnecessary, the gold wire bonding process is carried out directly on the pad 11 of the chip 1. Utilizing mechanical energy (ultrasonic vibration or pressure deformation energy) and thermal energy generated when a metal wire 23 is bonded to the pad 11, the protective film 12 of the welding pad is volatilized. Further, by bringing the metal wire 23 into direct contact with the pad 11, the metal wire bonding can be directly carried out. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
