NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a ROM into which digital data can be written on a user side.

SOLUTION: In a memory cell array MA of the ROM, a plurality of interlayer insulating layers and a plurality of metal layers (including bit lines BL being a metal layer on an outermost layer) are alternately laminated on respective memory transistors. The insulating layers INS are formed on a W (tungsten) plug in a first contact hole FC2 installed in the first interlayer insulating layer 18. Digital data "1" or "0" is written into the respective memory transistors according to whether the insulating layer INS is broken down or not in accordance with prescribed writing voltage (high voltage) applied from a bit line BL.

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