发明名称 |
Crosspoint-type ferroelectric memory |
摘要 |
A crosspoint-type ferroelectric memory is provided. In the crosspoint-type ferroelectric memory, a first memory cell array and a second memory cell array are stacked with a first interlayer insulating layer and a second interlayer insulating layer therebetween. The first memory cell array includes lower electrodes formed in stripes, upper electrodes formed in stripes in a direction that crosses the lower electrodes, ferroelectric capacitors that are disposed at least at intersecting parts of the lower electrodes and the upper electrodes, and an embedded insulating layer formed between the ferroelectric capacitors. The interlayer insulating layer includes a conductive layer between a first insulating layer and a second insulating layer.
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申请公布号 |
US2005117431(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20040976241 |
申请日期 |
2004.10.27 |
申请人 |
HASEGAWA KAZUMASA;AIZAWA HIROYUKI |
发明人 |
HASEGAWA KAZUMASA;AIZAWA HIROYUKI |
分类号 |
H01L27/105;G11C7/00;G11C11/22;H01L21/822;H01L21/8246;H01L27/06;H01L27/10;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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