Semiconductor laser device and method of manufacturing the same

摘要

The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic, and is comprised of the following: an n-type GaAs substrate 101 ; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101 ; a non-doped quantum well active layer 103 ; a p-type AlGaInP first cladding layer 104 ; a p-type GaInP etching stop layer 105 ; a p-type AlGaInP second cladding layer 106 ; a p-type GaInP cap layer 107 ; a p-type GaAs contact layer 108 ; an n-type AlInP block layer 109 , has a ridge portion and convex portions formed on the both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.