发明名称 |
Method of forming thin ruthenium-containing layer |
摘要 |
A method of forming a thin ruthenium-containing layer includes performing a CVD process using butyl ruthenoscene as a ruthenium source material. The thin ruthenium-containing layer may be formed by a one-step or two-step CVD process. The one-step CVD process is performed under a constant oxygen flow rate and a constant deposition pressure. The two-step CVD process includes forming a seed layer and forming a main layer, each of which is performed under a different process condition of a deposition temperature, an oxygen flow rate, and a deposition pressure.
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申请公布号 |
US2005118335(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20040014214 |
申请日期 |
2004.12.16 |
申请人 |
PARK SOON-YEON;YOO CHA-YOUNG;WON SEOK-JUN |
发明人 |
PARK SOON-YEON;YOO CHA-YOUNG;WON SEOK-JUN |
分类号 |
H01L21/205;C23C16/02;C23C16/18;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/28;H01L21/285;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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