发明名称 FORMING METHOD OF POROUS SEMICONDUCTOR LAYER, MANUFACTURING METHOD OF ELECTRODE SUBSTRATE FOR DYE-SENSITIZED SOLAR CELL, DYE-SENSITIZED SOLAR CELL, AND ELECTRODE SUBSTRATE THEREFOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a formation method of a semiconductor layer which can form a porous semiconductor layer of high adhesiveness with a member which is a foundation at a relatively high speed even under a low treatment temperature. <P>SOLUTION: After a film is formed by a coating liquid comprising a number of semiconductor fine particles, the film is irradiated with infrared light containing light of a wavelength which is absorbed in a liquid phase element of the film and the film is dried. A porous semiconductor layer is formed in this way. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005142446(A) 申请公布日期 2005.06.02
申请号 JP20030379017 申请日期 2003.11.07
申请人 DAINIPPON PRINTING CO LTD 发明人 NAKAGAWA HIROKI
分类号 H01L21/28;H01L31/04;H01M14/00 主分类号 H01L21/28
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