发明名称 |
FORMING METHOD OF POROUS SEMICONDUCTOR LAYER, MANUFACTURING METHOD OF ELECTRODE SUBSTRATE FOR DYE-SENSITIZED SOLAR CELL, DYE-SENSITIZED SOLAR CELL, AND ELECTRODE SUBSTRATE THEREFOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a formation method of a semiconductor layer which can form a porous semiconductor layer of high adhesiveness with a member which is a foundation at a relatively high speed even under a low treatment temperature. <P>SOLUTION: After a film is formed by a coating liquid comprising a number of semiconductor fine particles, the film is irradiated with infrared light containing light of a wavelength which is absorbed in a liquid phase element of the film and the film is dried. A porous semiconductor layer is formed in this way. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005142446(A) |
申请公布日期 |
2005.06.02 |
申请号 |
JP20030379017 |
申请日期 |
2003.11.07 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
NAKAGAWA HIROKI |
分类号 |
H01L21/28;H01L31/04;H01M14/00 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|