| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device with an insulated gate structure, by which the surface of a gate dielectic film forming region can be planarized in a small number of processes and trench corners can be rounded with sufficient controllability. SOLUTION: After the trench is formed and before the gate dielectric film is formed, an anneal treatment is made in a mixed gas atmosphere of hydrogen gas and rare gas with a hydrogen ratio at an anneal temperature T of≤1.3X10<SP>-18</SP>exp(0.043T)% at the anneal temperature of 980 to 1150°C, while a trench side wall is planarized and the trench corners are rounded so that the curvature may become no more than 0.003nm<SP>-1</SP>. On the other hand, the anneal treatment is made in a mixed gas atmosphere of hydrogen gas and rare gas with a hydrogen ratio at an anneal temperature T of≥6.11X10<SP>-14</SP>exp(0.0337T) at the anneal temperature of 980 to 1040°C, while the trench side wall is planarized and the trench corners are not rounded so that the curvature may become no less than 0.006nm<SP>-1</SP>. COPYRIGHT: (C)2005,JPO&NCIPI
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