| 摘要 |
PROBLEM TO BE SOLVED: To improve the reduction in the precision of film deposition control occurring at the time of depositing a thin film, particularly, the one with a film thickness of about≤100 nm in a film deposition device having a film deposition chamber where the object to be film-deposited is made into plasma, and film deposition is performed thereto. SOLUTION: The device is provided with: a plasma source 1 generating a plasma flow 3 being the mixture of positive ions of the material to be film-deposited and electrons; a guiding path 2 for guiding the plasma flow 3 into a film deposition chamber 6; a substrate holder 9 for holding a substrate 10, which has an opening in a direction facing the plasma flow 3; and a Faraday cup 21 formed of double circular cylinders insulated each other. A bias power source 22 is connected to the inner circular cylinder of the Faraday cup 21 for providing positive voltage and is connected to an ammeter 23 for measuring the electric current of electrons flowing into the Faraday cup 21. The ammeter is connected to a capacitor 24. Further, the capacitor 24 is connected to an amplifier 25 for integrating the quantity of electric charges passing through the ammeter 23. The integrated value of the quantity of the electric charges integrated by a monitoring means composed thereof is converted into a thickness of the film at real time, and is displayed as a film thickness output signal. COPYRIGHT: (C)2005,JPO&NCIPI
|
