发明名称 Metal-insulator-metal (MIM) capacitor and fabrication method for making the same
摘要 A metal-insulator-metal (MIM) capacitor includes a first metal plate; a first capacitor dielectric layer disposed on the first metal plate and a second metal plate stacked on the first capacitor dielectric layer. The first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor. A second capacitor dielectric layer is disposed on the second metal plate. A third metal plate is stacked on the second capacitor dielectric layer. The second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor. The first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor.
申请公布号 US2005116276(A1) 申请公布日期 2005.06.02
申请号 US20030707225 申请日期 2003.11.28
申请人 GAU JING-HORNG 发明人 GAU JING-HORNG
分类号 H01L21/02;H01L21/20;H01L21/8234;H01L21/8242;H01L21/8244;H01L23/522;H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L21/02
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